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AP3602AKTR-E1 Просмотр технического описания (PDF) - BCD Semiconductor

Номер в каталоге
Компоненты Описание
производитель
AP3602AKTR-E1
BCDSEMI
BCD Semiconductor BCDSEMI
AP3602AKTR-E1 Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
100mA REGULATED CHARGE PUMP
Electrical Characteristics
(CFLY=1µF, CIN=COUT=10µF, TA=25oC, unless otherwise specified.)
For AP3602A
Data Sheet
AP3602A/B
Parameter
Input Voltage
Quiescent Current
Symbol
VIN
IQ
Conditions
VO=5V
VIN=2.7V to 5.0V, IO=0mA,
VSHDN =VIN, Not Switching
Min Typ Max Unit
2.7
VO
V
13
30
µA
Output Voltage
VO
2.7V<VIN<5V, IO50mA
3.0V<VIN<5V, IO100mA
4.8
5.0
5.2
V
4.8
5.0
5.2
Shutdown Supply Current
ISHDN
2.7V<VIN<3.6V, IO=0, VSHDN =0V
3.6V<VIN<5.0V, IO=0, VSHDN =0V
0.01
1
µA
2.5
Ripple Voltage
VRIPPLE
VIN=2.7V, IO=50mA
VIN=3V, IO=100mA
25
mVPP
30
Efficiency
η
VIN=2.7V, IO=50mA
92
%
Frequency
fOSC Oscillator free running
1.2
MHz
SHDN Input Threshold
High
VIH
SHDN Input Threshold
Low
VIL
1.4
V
0.3
SHDN Input Current High
SHDN Input Current Low
VOUT Turn-on Time
Short-Circuit Current
IIH
VSHDN =VIN
IIL
VSHDN =GND
tON
VIN=3V, IO=0mA
ISC
VIN=3V, VO=GND, VSHDN =3V
-1
1
µA
-1
1
0.2
ms
300
mA
Apr. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5

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