AH276Z4-AE1 Просмотр технического описания (PDF) - BCD Semiconductor
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AH276Z4-AE1 Datasheet PDF : 10 Pages
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Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Electrical Characteristics
(TA=25oC, VCC=14V, unless otherwise specified)
Parameter
Output Saturation Voltage
Output Leakage Current
Supply Current
Output Rise Time
Output Fall Time
Switch Time Differential
Output Zener Breakdown Voltage
Thermal Protection Temperature
Thermal Protection Hysteresis
Symbol
VSAT
IOL
ICC
tr
tf
∆t
VZ
TSD
∆TSD
Test Condition
VCC=3.5V, IO=100mA
IO=350mA
VCE=16V
VCC=16V, Output Open
RL=820Ω, CL=20pF
RL=820Ω, CL=20pF
RL=820Ω, CL=20pF
Min Typ Max Unit
0.3
V
0.35
0.6
V
0.1
10
µA
12
16
mA
3.0
10
µs
0.3
1.5
µs
3.0
10
µs
55
V
178
oC
40
oC
Magnetic Characteristics
(TA=25oC)
Parameter
Symbol
Grade
Min
Typ
Max
Unit
Operating Point
A
10
BOP
B
5
50
Gauss
70
Gauss
C
100
Gauss
Releasing Point
A
-50
BRP
B
-70
-10
Gauss
-5
Gauss
C
-100
Gauss
Hysteresis
BHYS
75
Gauss
VDO (V)
Off-state
High
Turn off
BHYS
Turn on
Nov. 2009 Rev. 1. 4
VSAT
Low
On-state
N
BRP
0
BOP
S
Magnetic Flux Density (Gauss)
BCD Semiconductor Manufacturing Limited
5
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