7MBR100VX120-50 Просмотр технического описания (PDF) - Fuji Electric
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7MBR100VX120-50 Datasheet PDF : 8 Pages
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7MBR100VX120-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
200
VGE=20V
15V 12V
150
100
10V
50
0
0
8V
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
Tj=25°C
Tj=150°C
150
Tj=125°C
100
50
0
0
1
2
3
4
5
Collector current: IC [A]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
100.0
Cies
10.0
1.0
Cres
Coes
0.1
0.0
0
10
20
30
Collector - Emitter voltage: VCE [V]
3
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
200
VGE=20V
15V
12V
150
100
10V
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
8
6
4
2
Ic=200A
Ic=100A
Ic=50A
0
5
10
15
20
25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
VGE
VCE
0
200
400
600
800 1000
Gate charge: Qg [nC]
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