2SD817 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD817 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD817
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
600
V
VCEsat Collector-emitter saturation voltage IC=1.2A; IB=0.3A
5.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=1.2A; IB=0.3A
VCB=800V;IE=0
VEB=6V; IC=0
1.5
V
10
μA
10
μA
hFE
固IN电C半H导AN体GE SEMICONDUTOR DC current gain
IC=0.3A ; VCE=5V
10
30
2
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