2SD817 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD817 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD817
DESCRIPTION
·
·With TO-3 package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·High voltage power switching TV horizontal
deflection output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
1500
600
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
1.5
A
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
50
W
150
℃
-55~150
℃
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