2SC5004-T2 Просмотр технического описания (PDF) - NEC => Renesas Technology

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2SC5004-T2

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

NEC => Renesas Technology 

2SC5004

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

Collector Saturation Voltage

DC Current Gain

Gain Bandwidth Product

Feed–back Capacitance

Insertion Power Gain

SYMBOL

ICBO

IEBO

VCE (sat)

hFE

fT

Cre

|S21e|2

MIN.

60

3.0

5.0

TYP.

5.0

0.9

MAX.

0.1

0.1

0.5

120

1.2

UNIT

µA

µA

V

GHz

pF

dB

TEST CONDITION

VCB = 15 V, IE = 0

VEB = 1 V, IC = 0

hFE = 10, IC = 5 mA

VCE = 5 V, IC = 5 mA *1

VCE = 5 V, IC = 5 mA

VCB = 5 V, IE = 0, f = 1 MHz *2

VCE = 5 V, IC = 5 mA, f = 1 GHz

*1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %

*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

hFE Classification

Rank

FB

Marking

77

hFE

60 to 120

2

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