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C3963 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
C3963
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
C3963 Datasheet PDF : 5 Pages
1
2
3
4
5
f
T
– I
C
500
Common emitter
300
Tc = 25°C
100
VCE = 10 V
50
2
5
30
10
1
35
10
30 50 100 200
Collector current I
C
(mA)
2000
1500
P
C
– Ta
Ta = 25°C
1000
500
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
2SC3963
Safe Operating Area
1000
IC max (pulsed)*
500
300
IC max (continuous)
100 ms*
10 ms*
1 ms*
0.5 s*
100
50
DC operation
Tc = 25°C
30
*: Single nonrepetitive pulse
10
Tc = 25°C
Curves must be derated linearly with
5
increase in temperature.
VCEO
max
3
35
10
30 50 100
300
Collector-emitter voltage V
CE
(V)
4
2006-11-10
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