A1940 Просмотр технического описания (PDF) - Inchange Semiconductor

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A1940

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1940

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

-120

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB=B -0.6A

VBE(on)

Base-Emitter On Voltage

IC= -4A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -120V ; IE=0

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-2.0 V

-1.5 V

-5 μA

-5 μA

hFE-1

DC Current Gain

IC= -1A ; VCE= -5V

55

160

hFE-2

DC Current Gain

IC= -4A ; VCE= -5V

35

COB

Output Capacitance

IE=0; VCB= -10V; ftest= 1.0MHz

fT

Current-Gain—Bandwidth Product

IC= -1A; VCE= -5V

260

pF

30

MHz

‹ hFE-1 Classifications

R

O

55-110 80-160

isc Website：www.iscsemi.cn

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