2SA1215 Просмотр технического описания (PDF) - Sanken Electric co.,ltd.

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производитель

2SA1215

Silicon PNP Epitaxial Planar Transistor

Sanken Electric co.,ltd. 

LAPT 2SA1215

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)

Application : Audio and General Purpose

sAbsolute maximum ratings (Ta=25°C)

Symbol

2SA1215

Unit

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

–160

V

–160

V

–5

V

–15

A

–4

A

150(Tc=25°C)

W

150

°C

–55 to +150

°C

sElectrical Characteristics

(Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

Conditions

VCB=–160V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A

IC=–5A, IB=–0.5A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

2SA1215

–100max

–100max

–160min

50min∗

–2.0max

50typ

400typ

Unit

µA

µA

V

V

MHz

pF

∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

sTypical Switching Characteristics (Common Emitter)

VCC

RL

IC

VB2

IB1

(V)

(Ω)

(A)

(V)

(mA)

–60

12

–5

5

–500

IB2

(mA)

500

ton

(µs)

0.25typ

tstg

(µs)

0.85typ

tf

(µs)

0.2typ

External Dimensions MT-200

2-ø3.2±0.1

36.4±0.3

24.4±0.2

6.0±0.2

2.1

9

a

b

2

3

1.05

+0.2

-0.1

0.65

+0.2

-0.1

5.45±0.1

5.45±0.1

3.0

+0.3

-0.1

BCE

Weight : Approx 18.4g

a. Type No.

b. Lot No.

I C– V CE Characteristics (Typical)

–16

–7

50m

A

–

6

0

0

mA

–5

0

0

mA

–4

0

0m

A

–300mA

–12

–200mA

–150mA

–100mA

–8

–50mA

–4

IB=–20mA

0

0

–1

–2

–3

–4

Collector-Emitter Voltage VCE(V)

V CE( s a t ) – I B Characteristics (Typical)

–3

I C– V BE Temperature Characteristics (Typical)

(VCE=–4V)

–15

–2

–10

–1

IC=–10A

–5A

0

0

–0.2

–0.4

–0.6

–0.8

–1.0

Base Current IB(A)

–5

0

0

–1

–2

Base-Emittor Voltage VBE(V)

h FE– I C Characteristics (Typical)

200

(VCE=–4V)

h FE– I C Temperature Characteristics (Typical)

(VCE=–4V)

200

125˚C

100

Typ

50

100

25˚C

–30˚C

50

θ j-a– t Characteristics

2

1

0.5

10

–0.02

–0.1

–0.5 –1

Collector Current IC(A)

–5 –10 –15

30

–0.02

–0.1

–0.5 –1

Collector Current IC(A)

0.1

–5 –10 –15

1

10

100

Time t(ms)

1000 2000

f T– I E Characteristics (Typical)

(VCE=–12V)

80

Safe Operating Area (Single Pulse)

–40

Pc–Ta Derating

160

60

Typ

40

20

0

0.02

12

0.1

1

Emitter Current IE(A)

–10

120

DC

–5

80

–1

–0.5

Without Heatsink

Natural Cooling

–0.2

10

–2

–10

–100 –200

Collector-Emitter Voltage VCE(V)

40

Without Heatsink

5

0

0

25

50

75

100 125 150

Ambient Temperature Ta(˚C)

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