2N5745 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
2N5745 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2N4398 2N4399 2N5745
DESCRIPTION
·With TO-3 package
·Complement to type 2N5301/5302/5303
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·For use in power amplifier and switching
circuits applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N4398
VCBO
Collector-base voltage 2N4399
2N5745
2N4398
VCEO
Collector-emitter voltage 2N4399
2N5745
VEBO
Emitter-base voltage
IC
Collector current
2N4398/4399
2N5745
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-40
-60
-80
-40
-60
-80
-5
-30
-20
-7.5
200
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
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