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2N4124 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2N4124
GE
General Semiconductor GE
2N4124 Datasheet PDF : 5 Pages
1 2 3 4 5
TO-92
.181 (4.6)
2N4124
Small Signal Transistors (NPN)
.142 (3.6)
FEATURES
NPN Silicon Epitaxial Transistor
for switching and amplifier applications.
Especially suitable for AF-driver and
low-power output stages.
As complementary type, the PNP
transistor 2N4126 is recommended.
max..022 (0.55)
.098 (2.5)
E
C
B
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
V
Collector-Base Voltage
VCBO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
200
mA
Peak Collector Current
ICM
800
mA
Base Current
IB
50
mA
Power Dissipation at Tamb = 25 °C
Ptot
6251)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98

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