DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

28C011TRPFB12 Просмотр технического описания (PDF) - MAXWELL TECHNOLOGIES

Номер в каталоге
Компоненты Описание
производитель
28C011TRPFB12
Maxwell
MAXWELL TECHNOLOGIES Maxwell
28C011TRPFB12 Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
1 Megabit (128K x 8-Bit) EEPROM
28C011T
TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SYMBOL SUBGROUPS
MIN 1
MAX
UNITS
Write Cycle Time2
-120
-150
-200
tWC
9, 10, 11
--
--
--
ms
10
10
10
Data Latch Time
-120
-150
-200
tDL
9, 10, 11
ns
250
--
300
--
400
--
Byte Load Window
-120
-150
-200
tBL
9, 10, 11
µs
100
--
100
--
200
--
Byte Load Cycle
-120
-150
-200
tBLC
9, 10, 11
µs
0.55
30
0.55
30
0.95
30
Time to Device Busy
-120
-150
-200
tDB
9, 10, 11
ns
100
--
120
--
170
--
Write Start Time3
-120
-150
-200
tDW
9, 10, 11
ns
150
--
150
--
250
--
RES to Write Setup Time
-120
-150
-200
tRP
9, 10, 11
µs
100
--
100
--
200
--
VCC to RES Setup Time4
-120
-150
-200
tRES
9, 10, 11
1
1
3
µs
--
--
--
1. Use this device in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
11.10.03 REV 10
All data sheets are subject to change without notice 6
©2003 Maxwell Technologies
All rights reserved.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]