1SS154 Просмотр технического описания (PDF) - Toshiba

Номер в каталоге

Компоненты Описание

производитель

1SS154

Silicon Epitaxial Schottky Barrier Type Diode

Toshiba 

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS154

UHF~S Band Mixer/Detector Applications

· Small package.

Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Forward current

Junction temperature

Storage temperature range

Symbol

VR

IF

Tj

Tstg

Rating

Unit

6

V

30

mA

125

°C

-30~125

°C

1SS154

Unit: mm

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Reverse current

Forward voltage

Forward voltage

Total capacitance

Symbol

VR

IR

VF (1)

VF (2)

CT

Test Condition

IR = 10 mA

VR = 5 V

IF = 0.1 mA

IF = 10 mA

VR = 0, f = 1 MHz

Marking

JEDEC

―

JEITA

SC-59

TOSHIBA

1-3G1A

Weight: 0.012 g (typ.)

Min Typ. Max Unit

6

¾

¾

V

¾

¾

0.5

mA

¾

¾ 0.35

V

¾

0.5

¾

V

¾

0.8

¾

pF

1

2003-03-24

Share Link: