1N5806U Просмотр технического описания (PDF) - STMicroelectronics
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1N5806U Datasheet PDF : 9 Pages
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1N5806U
Characteristics
Symbol
Parameter
Table 5. Dynamic characteristics
Test conditions
Min. Typ. Max. Unit
IF = IR = 0.5 A, Irr = 0.05 A, dI/dt = -65 A/µs (min.) -
tRR Reverse recovery time
IF = 1 A, VR = 30 V, dI/dt = -50 A/µs,
-
VFP Forward recovery voltage IFM = 250 mA
-
tFR Forward recovery time IFM = 250 mA, VRF = 1.1 x VF
-
Cj
Diode capacitance
VR = 10 V, F = 1 MHz
-
- 25
ns
- 30
- 2.2 V
- 15 ns
- 25 pF
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward
current (typical values)
current (maximum values)
IFM(A)
10
IFM(A)
10
8
8
6
6
4
TTjj=112255°C
2
TTjj=2255°C
Tj = -65 °C
VFM(V)
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
4
Tj = 125 °C
2
Tj = 25°C
Tj = -65 °C
VFM(V)
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values)
IR(µA)
1.E+01
1.E+00
Tj=125 °C
1.E-01
1.E-02
1.E-03
1.E-04
0
Tj=75 °C
Tj=25 °C
VR(V)
20
40
60
80
100 120 140 160
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Single pulse
0.3
0.2
0.1
0.0
1.E-06
1.E-05
1.E-04
LCC2A
tP(s)
1.E-03
1.E-02
1.E-01
1.E+00
DocID15986 Rev 3
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