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1N5806U Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
1N5806U
ST-Microelectronics
STMicroelectronics ST-Microelectronics
1N5806U Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
1
Characteristics
1N5806U
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
150
IF(RMS) Forward rms current
6
IF(AV) Average forward rectified current
Tc 142 °Cδ = 0.5
2.5
IFSM Forward surge current
tp = 8.3 ms sinusoidal
35
tp = 10 ms sinusoidal
33
Tstg
Storage temperature range
-65 to + 175
Tj
Maximum operating junction temperature
175
Tsol
Maximum soldering temperature (1)
245
1. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Symbol
Rth (j-c) (1) Junction to case
1. Package mounted on infinite heatsink
Table 3. Thermal resistance
Parameter
Value
13
Unit
V
A
A
A
°C
°C
°C
Unit
C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR (1) Reverse current
VF (2) Forward voltage
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 680 µs, δ < 2%
Tj = 25 °C
-
VR = 150 V
Tj = 125 °C
-
Tj = 25 °C
-
VR = 160 V
Tj = -65 °C
-
Tj = 25 C
-
Tj = 125 C IF = 1 A
-
Tj = -65 C
-
Tj = 25 C IF = 2.5 A
-
-
0.5
-
20
µA
-
10
-
10
-
880
-
800
mV
-
1075
-
1000
To evaluate the conduction losses use the following equation:
P = 0.70 x IF(AV) + 0.10 x IF2(RMS )
2/9
DocID15986 Rev 3

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