MJE15029 Просмотр технического описания (PDF) - Boca Semiconductor
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производитель
MJE15029 Datasheet PDF : 2 Pages
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MJE15028, MJE15030
MJE15029, MJE15031
Emitter base voltage (open collector)
Collector current
Collector current (Peak value)
Base current
Total power dissipation up to TC = 25°C
Derate above 25°C
Total power dissipation up to TA = 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
From junction to ambient
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 120V
IB = 0; VCE = 150V
IE = 0; VCB = 120V
IE = 0; VCB = 150V
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 10 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 1 A; IB = 0.1 A
Base emitter on voltage
IC = 1A; VCE = 2V
D.C. current gain
IC = 0.1 A; VCE = 2 V
IC = 2 A; VCE = 2 V
IC = 3 A; VCE = 2 V
IC = 4 A; VCE = 2 V
Transition frequency f = 10 MHz
IC = 500 mA; VCE = 10 V
VEBO
IC
IC
IB
Ptot
Ptot
Tj
Tstg
max.
max.
max.
max.
max.
max.
max.
max.
max.
5.0
V
8.0
A
16
A
2.0
A
50
W
0.4
W/°C
2.0
W
0.016
W/°C
150
ºC
–65 to +150 ºC
Rth j–c
=
Rth j–a
=
2.5
°C/W
62.5
°C/W
15028
15029
15030
15031
ICEO
ICEO
ICBO
ICBO
max. 0.1
max. –
max. 10
max. –
– mA
0.1 mA
– µA
10 µA
IEBO
max.
10
µA
VCEO(sus)* min. 120
VCBO
min. 120
VEBO
min.
150 V
150 V
5.0
V
VCEsat* max.
0.5
V
VBE(on)* max.
1.0
V
hFE*
min.
40
hFE*
min.
40
hFE*
min.
40
hFE*
min.
20
fT(1)
min.
30
MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
(1) fT = |hfe|• ftest
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