100NDD Просмотр технического описания (PDF) - Naina Semiconductor ltd.
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100NDD Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
Diode – Diode Module
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
• Available in both M1 and M2 package
100NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values Units
Maximum average forward
current @ TJ = 850C
IF(AV)
100
A
Maximum average RMS
forward current
IF(RMS)
157
A
Maximum non-repetitive
surge current @ t = 10ms
IFSM
Maximum I2t for fusing @ t =
10ms
I2t
2000
A
18
kA2s
M1 & M2 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Values
Operating junction temperature range
TJ
-65 to +125
Thermal resistance, junction to case
Rth(JC)
0.35
Units
0C
0C/W
Electrical Characteristics (TA = 25OC unless otherwise noted)
Parameter
Maximum average on-state current, 1800C sinusoidal
Symbol
IT(max)
Maximum repetitive peak reverse voltage range
VRRM
Forward voltage drop
VFM
RMS isolation voltage
VISO
Values
100
200 to 1600
1.35
2500
Units
A
V
V
V
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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