STPS3060CW Просмотр технического описания (PDF) - STMicroelectronics
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STPS3060CW Datasheet PDF : 4 Pages
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STPS3060CW
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Rth(c)
Parameter
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
1.5
0.8
0.1
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage
current
Tj = 25°C
Tj = 125°C
VF * Forward voltage drop Tj = 25°C
VR = VRRM
IF = 15 A
Tj = 125°C
IF = 15 A
Tj = 25°C
IF = 30 A
Tj = 125°C
IF = 30 A
Pulse test: * tp = 5ms, δ < 2%
**tp = 380µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.6 x IF(AV) + 0.01 IF2(RMS)
Min. Typ. Max. Unit
150 µA
100 mA
0.85 V
0.65 0.75
1.05
0.80 0.90
Fig. 1: Conduction losses versus average current
(per diode).
PF(AV)(W)
16
14
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
12
10
8
6
4
2
IF(AV)(A)
0
0
2
4
6
8
10
12
14
δ=1
T
δ=tp/T
tp
16
18
20
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(AV)(A)
17
16
15
14
13
12
11
10
9
8
7
6
5
4
T
3
2
1
δ=tp/T
tp
0
Rth(j-a)=Rth(j-I)
Rth(j-a)=15°C/W
Tamb(°C)
0
25
50
75
100
125
150
2/4
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