MBR2100 Просмотр технического описания (PDF) - Micro Electro Magnetical Tech

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MBR2100

SCHOTTKY DIE SPECIFICATION 100 V 2 A ( Low Ir)

Micro Electro Magnetical Tech 

Micro-Electro-Magnetical Tech Co.

SCHOTTKY DIE SPECIFICATION

General Description: 100 V 2 A ( Low Ir)

TYPE: MBR2100

Single Anode

ELECTRICAL CHARACTERISTICS

DC Blocking Voltage: Ir=1mA(for wafer form)

Ir=0.5mA (for dice form)

Average Rectified Forward Current

Maximum Instantaneous Forward Voltage

@ 1 Amperes, Ta=25°C

@ 2 Amperes, 25°C

Maximum Instantaneous Reverse Voltage

VR= 100 Volt, Ta=25°C

SYM

VRRM

IFAV

VF MAX

IR MAX

Spec. Limit

100

2

0.74

0.82

0.1

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current

Operating Junction Temperature

Storage Temperatures

Cj MAX

IFSM

Tj

TSTG

50

-65 to +125

-65 to +125

Specification apply to die only. Actual performance may degrade when assembled.

MEMT does not guarantee device performance after assembly.

Data sheet information is subjected to change without notice.

DICE OUTLINE DRAWING

Die Sort UNIT

105 Volt

Amp

0.73 Volt

0.81

0.09 mA

pF

Amp

°C

°C

A

C

B

Top-side Metal

SiO2 Passivation

D

P+ Guard Ring

Back-side Metal

DIM

ITEM

um2

Mil2

A Die Size

1245 49.01

B Top Metal Pad Size 1025 40.3

C Passivation Seal

1203 47.3

D Thickness (Min)

254

10

Thickness (Max)

305

12

PS:

(1)Cutting street width is around 80um(3.14mil).

(2)Both of top-side and back-side metals are Ti/Ni/Ag.

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