DE375-501N21A Просмотр технического описания (PDF) - Directed Energy, Inc. An IXYS Company
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DE375-501N21A Datasheet PDF : 3 Pages
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Directed Energy, Inc.
An IXYS Company
♦ N-Channel Enhancement Mode
♦ Low Qg and Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 50MHz Maximum Frequency
DE375-501N21A
RF Power MOSFET
Preliminary Data Sheet
VDSS = 500 V
ID25
= 21 A
RDS(on) = 0.27 Ω
Symbol Test Conditions
Maximum Ratings
PDHS = 550 W
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS
PDAMB
TJ
TJM
Tstg
TL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ = 25°C to 150°C
500
V
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
Continuous
±20 V
Transient
±30 V
Tc = 25°C
21
A
Tc = 25°C, pulse width limited by TJM
126
A
Tc = 25°C
21
A
Tc = 25°C
30 mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
5 V/ns
>200 V/ns
550
W GATE
4.5 W
DRAIN
1.6mm (0.063 in) from case for 10 s
-55…+150 °C
150 °C
-55…+150 °C
300 °C
3
g
Test Conditions
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 4 ma
VGS = ±20 VDC, VDS = 0
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
500
V
2.5
5.5 V
±100 nA
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 15 V, ID = 0.5ID25, pulse test
50 µA
1 mA
0.27 Ω
Advantages
• Optimized for RF and high speed
switching at frequencies to 50MHz
• Easy to mount—no insulators needed
17
S • High power density
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