DE275X2-501N16A Просмотр технического описания (PDF) - Directed Energy, Inc. An IXYS Company

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DE275X2-501N16A

RF Power MOSFET

Directed Energy, Inc. An IXYS Company 

Directed Energy, Inc.

An IXYS Company

DE275X2-501N16A

RF Power MOSFET

♦ Common Source Push-Pull Pair

♦ N-Channel Enhancement Mode

♦ Low Qg and Rg

♦ High dv/dt

♦ Nanosecond Switching

The DE275X2-501N16A is a matched pair of RF power MOSFET devices in

a common source configuration. The device is optimized for push-pull or

parallel operation in RF generators and amplifiers at frequencies to >65

MHz.

Preliminary Data Sheet

VDSS

=

ID25

=

RDS(on) =

PDHS

=

500 V

16 A

0.5 Ω

750 W

Unless noted, specifications are for each output device

Symbol

VDSS

VDGR

VGS

VGSM

ID25

IDM

IAR

EAR

dv/dt

PDHS (1)

PDAMB (1)

RthJHS (1)

TJ

TJM

Tstg

TL

Weight

Test Conditions

TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 MΩ

Continuous

Transient

Tc = 25°C

Tc = 25°C, pulse width limited by TJM

Tc = 25°C

Tc = 25°C

IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,

Tj ≤ 150°C, RG = 0.2Ω

IS = 0

Tc = 25°C, Derate 6.0W/°C above 25°C

Tc = 25°C

1.6mm (0.063 in) from case for 10 s

Maximum Ratings

500

V

500

V

±20

V

±30

V

DRAIN 1

DRAIN 2

16

A

96

A GATE 1

16

A

GATE 2

20 mJ

5 V/ns

SG1 SD1

SD2 SG2

>200

750

5.0

0.17

-55…+150

150

-55…+150

300

4

V/ns

W

W

K/W

°C

°C

°C

°C

g

Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power

cycling capability

• IXYS advanced low Qg process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other

hazardous materials

Symbol

VDSS

VGS(th)

IGSS

IDSS

RDS(on)

gfs

Test Conditions

Characteristic Values

TJ = 25°C unless otherwise specified

min.

typ. max.

VGS = 0 V, ID = 3 ma

500

V

VDS = VGS, ID = 4 ma

2.5

5.5 V

VGS = ±20 VDC, VDS = 0

±100 nA

VDS = 0.8 VDSS TJ = 25°C

VGS = 0

TJ = 125°C

50 µA

1 mA

VGS = 15 V, ID = 0.5ID25

Pulse test, t ≤ 300µS, duty cycle d ≤ 2%

0.5 Ω

VDS = 15 V, ID = 0.5ID25, pulse test

2

6

S

Advantages

• High Performance Push-Pull RF

Package

• Optimized for RF and high speed

switching at frequencies to >65MHz

• Easy to mount—no insulators needed

• High power density

Note: All specifications are per each tran-

sistor, unless otherwise noted.

(1) Thermal specifications are for the

package, not per transistor

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