STPS20H100C Просмотр технического описания (PDF) - STMicroelectronics

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STPS20H100C

100 V power Schottky rectifier

STMicroelectronics 

STPS20H100C

Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

IR(1)

Reverse leakage

current

Tj = 25 °C

VR = VRRM

Tj = 125 °C

Tj = 25 °C IF = 8 A

Tj = 25 °C IF = 10 A

Tj = 25 °C IF = 16 A

VF(2)

Tj = 25 °C IF = 20 A

Forward voltage drop

Tj = 125 °C IF = 8 A

Tj = 125 °C IF = 10 A

Tj = 125 °C IF = 16 A

Tj = 125 °C IF = 20 A

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.55 x IF(AV) + 0.009 IF2(RMS)

4.5

µA

2

6

mA

0.71

0.77

0.81

0.88

V

0.56 0.58

0.59 0.64

0.65 0.68

0.67 0.73

Doc ID 5386 Rev 7

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