STPS2L60UF Просмотр технического описания (PDF) - STMicroelectronics
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STPS2L60UF Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS2L60
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
60
IF(RMS) Forward rms voltage
10
SMB flat TL = 130 °C δ = 0.5
IF(AV) Average forward current
SMA
TL = 115 °C δ = 0.5
2
DO-41 TL = 110 °C δ = 0.5
IFSM Surge non repetitive forward current
tp =10 ms sinusoidal
75
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
1600
Tstg Storage temperature range
Tj Maximum operating junction temperature (1)
-65 to + 150
150
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
V
A
A
A
W
°C
°C
V/µs
Symbol
Test conditions
Value
Unit
Rth(j-l) Junction-lead
SMB flat
15
SMA
25
°C/W
Lead length = 10 mm DO-41
30
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 100 °C
VF(1)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 2 A
IF = 4 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.43 x IF(AV) + 0.06 IF2(RMS)
100
µA
2
10
mA
0.60
0.51 0.55
V
0.77
0.62 0.67
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Doc ID 9173 Rev 6
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