STPS30150CG Просмотр технического описания (PDF) - STMicroelectronics
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STPS30150CG Datasheet PDF : 7 Pages
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STPS30150C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
0
25
Tj=175°C
Tj=150°C
Tj=125°C
Tj=100°C
C(pF)
1000
100
Tj=25°C
VR(V)
50
75
100
125
150
10
1
2
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
5
10
20
50
100
200
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Tj=125°C
(maximum values)
10.0
1.0
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy
printed circuit board, copper thickness: 35µm)
(TO-220FPAB).
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
5
10
15
20
25
30
35
40
4/7
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