STPS30150CW Просмотр технического описания (PDF) - STMicroelectronics
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STPS30150CW Datasheet PDF : 7 Pages
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STPS30150C
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, TO-247, D2PAK).
IM(A)
225
200
175
150
125
Tc=50°C
100
75
50
IM
25
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=75°C
Tc=125°C
1.E+00
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220FPAB).
IM(A)
140
130
120
110
100
90
80
70
60
50
40
30
IM
20
10
0
t
δ=0.5
1.E-03
t(s)
1.E-02
1.E-01
Tc=50°C
Tc=75°C
Tc=125°C
1.E+00
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, TO-247, D2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
δ=tp/T
1.E-01
tp
1.E+00
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4
0.3 δ = 0.2
0.2 δ = 0.1
0.1
Single pulse
0.0
1.E-03
1.E-02
tp(s)
1.E-01
T
δ=tp/T
1.E+00
tp
1.E+01
3/7
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