STPS30150CG Просмотр технического описания (PDF) - STMicroelectronics
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STPS30150CG Datasheet PDF : 7 Pages
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STPS30150C
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
TO-220FPAB
TO-220AB/D2PAK
TO-247
TO-220FPAB
TO-220AB/D2PAK
TO-247
Per diode
Total
Per diode
Total
Per diode
Total
Coupling
Coupling
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
4
3.3
1.6
0.85
1.5
0.8
2.6
0.1
0.1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR * Reverse leakage current
VF ** Forward voltage drop
Tests conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 15 A
Tj = 125°C IF = 15 A
Tj = 25°C
IF = 30 A
Tj = 125°C IF = 30 A
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x IF(AV) + 0.0073 IF2(RMS)
Min. Typ. Max. Unit
6.5 µA
8
mA
0.92 V
0.69 0.75
1
0.8 0.86
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(AV)(W)
14
12
10
8
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
6
4
T
2
IF(AV)(A)
δ=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(AV)(A)
18
16
Rth(j-a)=Rth(j-c) TO-220AB / TO-247 / D2PAK
14
12
Rth(j-a)=15°C/W
TO-220FP
10
Rth(j-a)=Rth(j-c)
8
6
4
T
2
δ=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
2/7
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