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STPS30150CW Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
STPS30150CW
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS30150CW Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
®
STPS30150C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj
VF (max)
2 x 15 A
150 V
175°C
0.75 V
A1
K
A2
K
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
INSULATED PACKAGE: TO-220FPAB
Insulating voltage: 2000V DC
Capacitance: 45pF
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power
Supplies.
A2
K
A1
TO-220FPAB
STPS30150CFP
A2
A1
D2PAK
STPS30150CG
A2
K
A1
TO-247
STPS30150CW
A2
A1K
TO-220AB
STPS30150CT
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
150
IF(RMS) RMS forward current
30
IF(AV) Average forward current TO-220FPAB
Tc = 120°C per diode
15
δ = 0.5
TO-220AB/D2PAK Tc = 155°C per device
TO-247
30
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
220
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
10500
Tstg Storage temperature range
- 65 to + 175
Tj Maximum operating junction temperature *
175
dV/dt Critical rate of rise of reverse voltage
10000
Unit
V
A
A
A
W
°C
°C
V/µs
* : dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j a)
February 2004 - Ed: 7
1/7

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