STPS30150CW(2003) Просмотр технического описания (PDF) - STMicroelectronics
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STPS30150CW Datasheet PDF : 6 Pages
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STPS30150CT/CW/CFP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode).
IM(A)
250
200
150
100
50 IM
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Tc=50°C
Tc=75°C
Tc=125°C
1E+0
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220FPAB only).
IM(A)
140
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
T
δ=tp/T
1E-1
tp
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
3/6
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