STPS30150CG(2010) Просмотр технического описания (PDF) - STMicroelectronics
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STPS30150CG Datasheet PDF : 11 Pages
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STPS30150C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
IF = 15 A
VF(2) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
IF = 15 A
IF = 30 A
Tj = 125 °C IF = 30 A
1. Pulse test: tp = 5ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x IF(AV) + 0.0073 IF2(RMS)
6.5 µA
8 mA
0.92
0.69 0.75
V
1
0.8 0.86
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current (per
diode)
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
PF(AV)(W)
14
12
10
8
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
IF(AV)(A)
18
16
14
12
10
Rth(j-a)=Rth(j-c) TO-220AB / TO-247 / D2PAK
Rth(j-a)=15°C/W
TO-220FP
Rth(j-a)=Rth(j-c)
6
4
T
2
IF(AV)(A)
δ=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
8
6
4
T
2
δ=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1 µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.001
0.01
0.1
0.4
tp(µs)
0.2
Tj(°C)
0
25
50
75
100
125
150
1
10
100
1000
Doc ID 7757 Rev 8
3/11
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