STPS30150C(2010) Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STPS30150C Datasheet PDF : 11 Pages
| |||
Characteristics
1
Characteristics
STPS30150C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
150
V
IF(RMS) Forward rms current
30
A
TO-220FPAB Tc =120 °C
15
IF(AV)
Average forward current
Per diode
δ = 0.5
TO-220AB
TO-247/D2PAK
Tc = 155 °C
Per device
30
A
IFSM
PARM
Tstg
Tj
dV/dt
Surge non repetitive forward current
tp = 10 ms sinusoidal
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Storage temperature range
Maximum operating junction temperature (1)
Critical rate of rise of reverse voltage
220
A
10500
W
-65 to + 175 °C
175
°C
10000
V/µs
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----) condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
Rth (c) Coupling
TO-220FPAB
Per diode
Total
TO-220AB/D2PAK
Per diode
Total
TO-247
Per diode
Total
TO-220FPAB
TO-220AB/D2PAK/TO-247
4
3.3
1.6
0.85
1.5
°C/W
0.8
2.6
0.1
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
2/11
Doc ID 7757 Rev 8
Share Link: 