SUP60N06-12P-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SUP60N06-12P-GE3 Datasheet PDF : 7 Pages
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SUP60N06-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
ID = 15 A
1.7
10
1.4
VGS = 10 V
1
1.1
0.1
TJ = 150 °C
TJ = 25 °C
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
74
ID = 1 mA
70
66
62
- 50 - 25 0
25 50 75 100 125 150
TJ - Temperature (°C)
Drain-Source Breakdown vs. Junction Temperature
75
0.01
TJ = - 50 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.4
0.0
- 0.4
- 0.8
- 1.2
ID = 1 mA
ID = 250 µA
- 1.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
60
Package Limited
45
30
15
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
www.vishay.com
4
Document Number: 69070
S10-1475-Rev. C, 05-Jul-10
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