STPS1545C Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STPS1545C Datasheet PDF : 10 Pages
| |||
STPS1545C
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current (per
diode)
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
PF(AV)(W)
6
5
δ = 0.05
δ = 0.1
δ = 0.2
4
3
δ = 0.5
δ=1
IF(AV)(A)
9
8
7
6
Rth(j-a)=40°C/W
5
4
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
2
3
T
T
2
1
IF(AV)(A)
δ=tp/T
tp
1
δ=tp/T
tp
0
0
0
1
2
3
4
5
6
7
8
9
10
0
25
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
IM(A)
120
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
100
80
60
40
IM
20
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
0.8
TC=50°C
TC=100°C
0.6
δ = 0.5
0.4
TC=150°C
1E+0
0.2
δ = 0.2
δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Doc ID 3503 Rev 7
3/10
Share Link: 