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IRIS-G5624A Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге
Компоненты Описание
производитель
IRIS-G5624A
IR
International Rectifier IR
IRIS-G5624A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRIS-G5624A
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25, Vin=18V,unless otherwise specified)
Symbol
Defi ni ti on
Vin(ON) Operation start voltage
Vin(OFF) Operation stop voltage
Iin(ON) Circuit current in operation
Iin(OFF) Circuit current in non-operation
TOFF(MAX) Maximum OFF time
Minimum time for input of quasi
Tth(2) resonant signals
*6
TOFF(MIN) Minimum OFF time
*7
Vth(1) O.C.P/F.B Pin threshold voltage 1
Vth(2) O.C.P/F.B Pin threshold voltage 2
IOCP/FB O.C.P/F.B Pin extraction current
Vin(OVP) O.V.P operation voltage
Iin(H)
Latch circuit sustaining current *8
Vin(La.OFF) Latch circuit release voltage *8
Tj(TSD) Thermal shutdown operating temperature
Vin(SENSE) Detected Voltage
- Temperature coefficient of detected voltage
MIN
14.4
9
-
-
45
-
-
0.68
1.3
1.2
34
-
6.6
140
31.7
-
Rati ngs
TYP
16
10
-
-
-
-
-
0.73
1.45
1.35
36.5
-
-
-
32
2.5
MAX
17.6
11
20
100
55
1
2
0.78
1.6
1.5
39
400
8.4
-
32.3
-
Uni ts
V
V
mA
µA
µsec
Test
Condi ti ons
Vin=017.6V
Vin=17.69V
-
Vin=14V
-
µsec
µsec
V
V
mA
V
µA
V
V
mV/
-
-
-
-
Vin=039.0V
Vin=39.08.5V
Vin=39.06.6V
-
Vin=31.732.3V
Vin=31.732.3V
*6 Recommended operating conditions
Time for input of quasi resonant signals
Tth(2)1.0μsec
For the quasi resonant signal inputted to OCP/FB Pin
at the time of quasi resonant operation, the signal shall
be wider than Tth(2).
O.C.P/F.B
0V
Vth(2)
*7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25) unless otherwise specified
Symbol
Defi ni ti on
MIN
Rati ngs
TYP
VDSS Drain-to-Source breakdown voltage
450
-
IDSS Drain leakage current
-
-
RDS(ON) On-resistance
tf Switching time
-
-
-
-
θch-F Thermal resistance
-
-
MAX
-
300
1
250
2
Uni ts
V
µA
Ω
nsec
/W
Test Conditions
ID=300µA
V3- 2=0V(short)
VDS =450V
V3-2=0V(s h o rt)
V3-2=10V
ID=1.8A
-
Between channel and
internal frame
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