M4T28-BR12SH6TR(2003) Просмотр технического описания (PDF) - STMicroelectronics
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M4T28-BR12SH6TR Datasheet PDF : 12 Pages
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M4T28-BR12SH, M4T32-BR12SH
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice reliability. Refer also to the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 2. Absolute Maximum Ratings
Symbol
Parameter
TA
Ambient Operating Temperature
Grade 1
Grade 6(1)
TSTG
Storage Temperature (VCC Off, Oscillator Off)
Note: 1. Only the M4T32-BR12SH is available in Industrial temperature (Grade 6).
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
Value
0 to 70
–40 to 85
–40 to 85
Unit
°C
°C
°C
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 3. Operating and AC Measurement Conditions
Parameter
M4T28-BR12SH
Nominal Battery Voltage (VCC)
2.8
Nominal Battery Capacity
48
Battery Chemistry
Li(CF)
Crystal Load Capacitance (CL)
12.5
Nominal Crystal Frequency
32.768
Crystal Accuracy (@ 25°C)
± 35
M4T32-BR12SH
2.8
120
Li(CF)
12.5
32.768
± 35
Unit
V
mAh
pF
kHz
ppm
4/12
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