On-state characteristic model:
VT = A+ B⋅iT + C ⋅ln(iT +1) + D⋅ IT
Valid for iT = 500 – 14000 A
A
B
C
D
1.0649e+ 1.0500e-4 -3.8879e-2 8.1550e-3
5STP 34N5200
Fig. 2 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 3 On-state characteristics.
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02
page 4 of 6