BH12PB1WHFV Просмотр технического описания (PDF) - ROHM Semiconductor

Номер в каталоге

Компоненты Описание

производитель

BH12PB1WHFV

CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators

ROHM Semiconductor 

BH□□PB1WHFV Series

Technical Note

●Notes for use

1. Absolute maximum ratings

An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break

down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated

values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.

2. Thermal design

Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.

3. Inter-pin shorts and mounting errors

Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any

connection error or if pins are shorted together.

4. Thermal shutdown circuit (TSD)

The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut

the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not

continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is

assumed.

5. Ground wiring patterns

The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage

on the power ground line may damage the device.

6. Overcurrent protection circuit

The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This

circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current

flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other

component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.

However, the IC should not be used in applications characterized by the continuous operation or transitioning of the

protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to

temperatures.

7. Actions in strong electromagnetic field

Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to

malfunction.

8. Back current

In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this

current by inserting a bypass diode between the VIN and VOUT pins.

Back current

VIN

OUT

STBY GND

Fig.32 Example Bypass Diode Connection

9. I/O voltage difference

Using the IC in automatic switching mode when the I/O voltage differential becomes saturated (VIN - VOUT < 150 mV)

may result in a large output noise level. If the noise level becomes problematic, use the IC with the SEL pin in the high

state when the voltage differential is saturated.

10. GND Voltage

The potential of GND pin must be minimum potential in all operating conditions.

www.rohm.com

© 2011 ROHM Co., Ltd. All rights reserved.

8/10

2011.01 - Rev.B

Share Link: