MBRB40250T Просмотр технического описания (PDF) - ON Semiconductor
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MBRB40250T Datasheet PDF : 7 Pages
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MBR40250, MBR40250T, MBRF40250T, MBRB40250T
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
250
V
VRWM
VR
Average Rectified Forward Current
(Rated VR) TC = 82°C MBR40250, MBR40250T, MBRB40250T
(Rated VR) TC = 46°C MBRF40250T
IF(AV)
40
A
Peak Repetitive Forward Current
IFRM
80
A
(Rated VR, Square Wave, 20 kHz) TC = 82°C MBR40250, MBR40250T, MBRB40250T
(Rated VR, Square Wave, 20 kHz) TC = 46°C MBRF40250T
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Storage Temperature
Tstg
*65 to +175
°C
Operating Junction Temperature
TJ
*65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
Junction−to−Case
MBR40250(T) and MBRB40250T
MBRF40250
Junction−to−Ambient
MBR40250(T)
MBRF40250
MBRB40250T
Symbol
RqJC
RqJA
Value
2.0
3.0
60
50
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
VF
V
IF = 20 A, TC = 25°C
0.86
IF = 20 A, TC = 125°C
0.71
IF = 40 A, TC = 25°C
0.97
IF = 40 A, TC = 125°C
0.86
Maximum Instantaneous Reverse Current (Note 1)
IR
Rated DC Voltage, TC = 25°C
Rated DC Voltage, TC = 125°C
mA
0.25
30
Maximum Reverse Recovery Time
trr
ns
IF = 1.0 A, di/dt = 50 A/ms, TC = 25°C
35
DYNAMIC CHARACTERISTICS
Capacitance
VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz
CT
500
pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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