SSP4N60B Просмотр технического описания (PDF) - Unspecified
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SSP4N60B Datasheet PDF : 10 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IVDG=S =2500Vμ
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100
DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for SSP4N60B
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2002 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 2.0 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100
100 ms
DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for SSS4N60B
Rev. B, June 2002
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