Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
STG3159DTR Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STG3159DTR
single SPDT switch
STMicroelectronics
STG3159DTR Datasheet PDF : 18 Pages
1
2
3
4
5
6
7
8
9
10
Next
Last
Electrical characteristics
STG3159
Table 5.
DC specifications (continued)
Test conditions
Value
Symbol Parameter
Vcc (V)
T
A
= 25°C
Min. Typ. Max.
-40 to 85°C
Min. Max.
-55 to 125°C Unit
Min. Max.
OFF state
I
OFF
leakage
current
4.3
V
S
= 0.3 or
4V
±20
±100
nA
(SN), (D)
Input
I
IN
leakage
current
0 – 4.3
V
SEL
= 0 to
4.3V
±0.1
±1
µ
A
Quiescent
V
SEL
=
I
CC
supply
1.65 – 4.3 V
CC
or
current
GND
±0.05
±0.2
±1
µ
A
Quiescent
4.3
V
SEL
=
1.65V
±17 ±35
±70
supply
I
CCLV
current low
4.3
voltage
V
SEL
=
1.80V
±15 ±30
±60
µ
A
driving
4.3
V
SEL
=
2.60V
±5 ±10
±20
1.
∆
R
ON
= R
ON(Max)
- R
ON(Min)
2. Flatness is defined as the difference between the maximum and minimum value of ON-resistance as measured over the
specified analog signal ranges.
6/18
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]