SD683 Просмотр технического описания (PDF) - Inchange Semiconductor

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SD683

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD683

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; L= 10mH

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 0.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 10A; IB= 0.2A

ICBO

Collector Cutoff Current

VCB= 600V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 5A; VCE= 5V

hFE-2

DC Current Gain

IC= 15A; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 10A

COB

Output Capacitance

Switching Times

VCB= 50V, IE= 0; ftest= 1MHz

ton

Turn-On Time

ts

Storage Time

VCC=150V; IB1= -IB2= 0.1A

tf

Fall Time

MIN TYP MAX UNIT

400

V

2.0

V

2.5

V

0.5 mA

30 mA

500

30

3.0

V

100

pF

0.4

μs

15

μs

3.0

μs

isc Website：www.iscsemi.cn

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