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K8A50D Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
K8A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)
Toshiba
K8A50D Datasheet PDF : 7 Pages
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7
TK8A50D
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10
μ
100
μ
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
3.125°C/W
1m
10 m
100 m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (pulsed)
*
10
ID max (continuous)
*
100
μ
s
*
1 ms
*
DC operation
1
Tc
=
25°C
0.1
*: SINGLE NONREPETITIVE
0.01
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
200
160
120
www.DataSheet.net/
80
40
0
25
50
75
100
125
150
CHANNEL TEMPEATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVEFORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
4.4 mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2008-09-16
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