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Номер в каталоге
Компоненты Описание
TK13A60D Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TK13A60D
Silicon N-Channel MOS Type (π -MOSⅦ ) Field Effect Transistor
Toshiba
TK13A60D Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
20
COMMON SOURCE
10
Tc
=
25°C
PULSE TEST
16
8
7.0
12
6.5
8
6.0
4
5.5
VGS
=
5V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE V
DS
10
(V)
TK13A60D
I
D
– V
DS
30
10
9.0
8.0
COMMON SOURCE
Tc
=
25°C
25
PULSE TEST
7.5
20
7.0
15
6.5
10
6.0
5
VGS
=
5.5V
0
0
10
20
30
40
DRAIN-SOURCE VOLTAGE V
DS
50
(V)
I
D
– V
GS
30
COMMON SOURCE
VDS
=
20 V
25
PULSE TEST
20
15
10
Tc
=
100°C
5
Tc
=
25°C
Tc
= −
55°C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
10
COMMON SOURCE
Tc
=
25
℃
8
PULSE TEST
6
ID
=
13 A
4
6.5
2
3
0
0
4
8
12
16
GATE-SOURCE VOLTAGE V
GS
20
(V)
⎪
Y
fs
⎪
– I
D
100
COMMON SOURCE
VDS
=
20 V
PULSE TEST
10
100
25
Tc
= −
55°C
1
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
1
VGS
=
10 V
、
15 V
0.1
COMMON SOURCE
Tc
=
25°C
PULSE TEST
0.01
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2008-09-16
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