RFM15N15 Просмотр технического описания (PDF) - Intersil
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RFM15N15 Datasheet PDF : 5 Pages
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RFP15N15
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP15N15
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
150
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
150
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
15
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
40
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
75
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance Junction-to-Case
BVDSS ID = 250µA, VGS = 0V
150
VGS(TH) VGS = VDS, ID = 250µA
2
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
IGSS VGS = ±20V, VDS = 0V
-
rDS(ON) ID = 15A, VGS = 10V (Figures 6, 7)
-
VDS(ON) ID = 15A, VGS = 10V
-
CISS VDS = 25V, VGS = 0V, f = 1MHz
-
(Figure 9)
COSS
-
CRSS
-
td(ON) VDD = 75V, ID ≈ 7.5A, RG = 50Ω, VGS = 10V
-
RL = 9.9Ω,
tr
(Figures 10, 11, 12)
-
td(OFF)
-
tf
-
-
TYP MAX UNITS
-
-
V
-
4
V
-
1
µA
25
µA
-
±100 nA
- 0.150 Ω
-
2.25
V
- 1700 pF
-
750 pF
-
350 pF
50
75
ns
150 225
ns
185 280
ns
125 190
ns
-
1.67 oC/W
Source to Drain Diode Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 7.5A
Reverse Recovery Time
trr
ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN
TYP MAX UNITS
-
-
1.4
V
-
200
-
ns
2
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