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MCP1726-1202E Просмотр технического описания (PDF) - Microchip Technology

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производитель
MCP1726-1202E
Microchip
Microchip Technology Microchip
MCP1726-1202E Datasheet PDF : 30 Pages
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MCP1726
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = (VR + 0.5V) or 2.3V, whichever is greater, IOUT = 1 mA,
CIN = COUT = 4.7 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C
Parameters
Sym
Min
Typ
Max
Units
Conditions
Power Good Characteristics
Input Voltage Operating Range
VPWRGD_VIN
1.0
6.0
V
TA = +25°C
for Valid PWRGD
1.2
6.0
TA = -40°C to +125°C
ISINK = 100 µA
PWRGD Threshold Voltage
PWRGD_THF
88
92
96
% VOUT < 2.5V, Falling Edge
(Referenced to VOUT)
89
92
95
% VOUT > 2.5V, Falling Edge
PWRGD_THR
89
94
98
% VOUT < 2.5V, Rising Edge
90
93
96
% VOUT > 2.5V, Rising Edge
PWRGD Output Voltage Low
VPWRGD_L
0.2
0.4
V
IPWRGD SINK = 1.2 mA
PWRGD Leakage
PWRGD_LK
0.1
µA VPWRGD = VIN = 6.0V
PWRGD Time Delay
TPG
200
µs
CDELAY = OPEN
10
30
55
ms CDELAY = 0.01 µF
300
ms CDELAY = 0.1 µF
Detect Threshold to PWRGD
TVDET-PWRGD
170
µs
Active Time Delay
Shutdown Input
Logic-High Input
Logic-Low Input
SHDN Input Leakage Current
VSHDN-HIGH
VSHDN-Low
SHDNILK
45
15
-0.1
±0.001
+0.1
%VIN
%VIN
µA
VIN = 2.3V to 6.0V
VIN = 2.3V to 6.0V
VIN = 6V, SHDN =VIN,
SHDN = GND
AC Performance
Output Delay From SHDN
TOR
100
µs SHDN = GND to VIN
VOUT = GND to 95% VR
Output Noise
eN
2.0
µV/Hz IOUT = 200 mA, f = 1 kHz,
COUT = 1 µF (X7R Ceramic),
VOUT = 2.5V
Power Supply Ripple Rejection
Ratio
PSRR
54
dB f = 100 Hz, COUT = 10 µF,
IOUT = 100 mA,
VINAC = 30 mV pk-pk,
CIN = 0 µF
Thermal Shutdown Temperature
TSD
150
°C IOUT = 100 µA,
VOUT = 1.8V, VIN = 2.8V
Thermal Shutdown Hysteresis
ΔTSD
10
°C IOUT = 100 µA,
VOUT = 1.8V, VIN = 2.8V
Note 1:
2:
3:
4:
The minimum VIN must meet two conditions: VIN 2.3V and VIN ≥ (VR + 2.5%) + VDROPOUT.
VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output
voltage for the adjustable cases. VR = VADJ * ((R1/R2)+1). Figure 4-1.
TCVOUT = (VOUT-HIGH – VOUT-LOW) *106 / (VR * ΔTemperature). VOUT-HIGH is the highest voltage measured over the
temperature range. VOUT-LOW is the lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of VIN = VR + 0.5V.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 125°C can impact device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
© 2007 Microchip Technology Inc.
DS21936C-page 5

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