2SK3565
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS IG =±10 μA, VDS = 0 V
±30 ⎯
⎯
V
IDSS
VDS = 720 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
900 ⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON) VGS = 10 V, ID = 3 A
⎯
2.0 2.5
Ω
⎪Yfs⎪
VDS = 20 V, ID = 3 A
2.0 4.5
⎯
S
Ciss
⎯ 1150 ⎯
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
20
⎯
pF
Coss
⎯ 100 ⎯
tr
10 V
VGS
ID = 3 A VOUT
⎯
30
⎯
0V
ton
50 Ω
RL =
⎯
70
⎯
66.7 Ω
ns
tf
⎯
60
⎯
VDD ∼− 200 V
toff
Duty ≤ 1%, tw = 10 μs
⎯ 170 ⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 5 A
Qgd
⎯
28
⎯
⎯
17
⎯
nC
⎯
11
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
5
A
⎯
⎯
15
A
⎯
⎯
−1.7
V
⎯
900
⎯
ns
⎯
5.4
⎯
μC
Marking
K3565
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product.
Lot No.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
Note 4
certain hazardous substances in electrical and electronic equipment.
2
2013-11-01