HAT2167H(2003) Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

HAT2167H
(Rev.:2003)

Silicon N Channel Power MOS FET Power Switching

Renesas Electronics 

HAT2167H

3

1

D=1

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

0.5

0.3

0.2

0.1 0.1

0.05

0.03

0.01

0.02

0.01

1shot

pulse

10 µ

100 µ

θch - c(t) = γs (t) • θch - c

θch - c = 6.25°C/ W, Tc = 25°C

PDM

PW

T

D=

PW

T

1m

10 m

100 m

1

10

Pulse Width PW (s)

Switching Time Test Circuit

Vin Monitor

Rg

D.U.T.

Vout

Monitor

RL

Vin

10 V

VDS

= 10 V

Switching Time Waveform

Vin 10%

Vout 10%

90%

td(on)

tr

90%

10%

90%

td(off)

tf

Rev.4.00, Jun.04.2003, page 8 of 10

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