BU100 Просмотр технического описания (PDF) - Inchange Semiconductor
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BU100 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU100
DESCRIPTION
·With TO-3 package
·High voltage capability
APPLICATIONS
·For horizontal deflection output stage
of CTV receivers and high voltalge,
fast switching and industrial applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
PD
Total power dissipation
TC=75℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
150
60
7
10
15
15
200
-55~200
UNIT
V
V
V
A
A
W
℃
℃
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