9918H Просмотр технического описания (PDF) - Unspecified
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9918H Datasheet PDF : 6 Pages
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SSM9918H,J
12
I D =18A
10
8
V DS =10V
V DS =15V
V DS =20V
6
4
2
0
0
5
10
15
20
25
30
35
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10000
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
5
9
13
17
21
25
29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0
0.4
0.8
1.2
1.6
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0
50
100
150
Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Rev.2.01 6/26/2003
www.SiliconStandard.com
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