5Q1265RF(2003) Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

5Q1265RF
(Rev.:2003)

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA5Q-SERIES

Absolute Maximum Ratings (SFET Part)

(Ta=25°C, unless otherwise specified)

Characteristic

KA5Q1565RF

Drain-Source Breakdown Voltage

Symbol

BVDSS

Zero Gate Voltage Drain Current

IDSS

Static Drain-Source on Resistance (Note)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn on Delay Time

Rise Time

Turn Off Delay Time

RDS(ON)

Ciss

Coss

Crss

td(on)

tr

td(off)

Fall Time

tf

Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

Gate-Source Charge

Qgs

Gate-Drain (Miller) Charge

Qgd

Test condition

VGS=0V, ID=50µA

VDS=Max., Rating,

VGS=0V

VDS=0.8Max., Rating,

VGS=0V, TC=85°C

VGS=10V, ID=7.3A

VGS=0V, VDS=25V,

f=1MHz

VDD=0.5BVDSS, ID=14.6A

(MOSFET switching

time are essentially

independent of

operating temperature)

VGS=10V, ID=14.6A,

VDS=0.8BVDSS (MOSFET

switching time are

essentially independent of

operating temperature)

Min. Typ. Max. Unit

650 -

-

V

-

- 200 µA

-

- 300 µA

- 0.5 0.65 W

- 2580 -

- 270 -

pF

-

50

-

-

50

-

- 155 -

- 270 -

nS

- 125 -

-

90 117

-

15

-

nC

-

45

-

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

5

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