KA5Q0765RT-YDTU(2003) Просмотр технического описания (PDF) - Fairchild Semiconductor
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Компоненты Описание
производитель
KA5Q0765RT-YDTU Datasheet PDF : 16 Pages
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(Ta=25°C, unless otherwise specified)
Characteristic
KA5Q1265RF
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy (2))
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Thermal Resistance
Symbol
VDGR
VGS
IDM
ID
ID
IAS(EAS)
VCC,MAX
VFB
VSync
PD
Derating
TJ
TA
TSTG
Rthjc
KA5Q1565RF
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy (2))
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Thermal Resistance
VDGR
VGS
IDM
ID
ID
IAS(EAS)
VCC,MAX
VFB
VSync
PD
Derating
TJ
TA
TSTG
Rthjc
Note:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, VDD =50V, RG = 27Ω, starting Tj = 25°C
3. L = 13uH, starting Tj = 25°C
Value
650
±30
48
12
8.4
33(950)
40
-0.3 to VCC
-0.3 to 13
95
0.76
+160
-25 to +85
-55 to +150
1.31
650
±30
60
15
12.0
36(1050)
40
-0.3 to VCC
-0.3 to 13
98
0.78
+160
-25 to +85
-55 to +150
1.28
KA5Q-SERIES
Unit
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
°C/W
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
°C/W
3
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